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Aluminiumoxid Substrate - Sapphire
Materials properties
| Structure formula: |
Al2O3 |
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| State: |
monocrystalline |
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| Crystal structure: |
hexagonal |
a = 4.77 Å
c = 13.04 Å |
| Density: |
3.98 g/cm3 |
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| Melting point: |
2040°C |
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| Coefficient of expansion: |
6.7 * 10-6/°C
5.0 * 10-6/°C |
parallel C-axis
perpendicular C-axis |
| Dielectrical constant (e ): |
9.0
11.5 |
parallel C-axis
perpendicular C-axis |
| Dielectrical lost (10GHz): |
3 * 10-5
8.6 * 10-5 |
parallel C-axis
perpendicular C-axis |
| Specific resistance: |
1019 W/cm |
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Substrate properties
| Production method: |
Czochralski, HEM, Verneuil grown |
| Orientation: |
(0001), (1-102), (11-20) |
| Orientation accuracy: |
until £ 0.5° |
| Standard size: |
10mm x 10mm x thickness 1mm or 0.5mm |
| Tolerance of length: |
± 0.02mm |
| Tolerance of thickness: |
± 0.02mm |
| Parallelness: |
£ 0.3° |
| Polishing: |
one side or both sides epi-polished |
| Flatness: |
£ 0.3µm / 10mm |
| Roughness of surface: |
Ra £ 10Å |
| Scratches: |
none |
| Surface quality: |
with light microscope without defects |
Other sizes and specifications on request
© 1996 - 2008 MaTecK GmbH - Im Langenbroich 20 - D-52428 Juelich - phone: +49 (0) 2461 / 9352-0 - fax: +49 (0) 2461 / 9352-11 - Contact: info@mateck.de
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