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Silicon carbide Substrate
Materials properties
| Structure formula: |
SiC (6H) |
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| State: |
monocrystalline |
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| Crystal structure: |
hexagonal |
a = 3.08 Å
c = 15.12 Å |
| Melting point: |
2700°C subl. |
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Substrate properties
| Production method: |
Lely |
| Orientation: |
(0001) |
| Orientation accuracy: |
max. 30'; typ. < 20' |
| Standard size: |
10mm x 10mm, 10mm x 5mm, thickness 0.3mm |
| max. diameter: |
Ø 1" |
| Tolerance of length: |
+0 / - 0.05mm |
| Polishing: |
one side or both sides epi-polished |
Other sizes and specifications on request
© 1996 - 2008 MaTecK GmbH - Im Langenbroich 20 - D-52428 Juelich - phone: +49 (0) 2461 / 9352-0 - fax: +49 (0) 2461 / 9352-11 - Contact: info@mateck.de
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