| Structure formula: |
ZnS |
| Crystal structure: |
cubic |
| Crystal axis: |
(111) |
| Orientation: |
(100); (110); (111) ±30 arc minutes.
Other orientations available on request. |
| Production method: |
Markov |
| Lattice paramters, A |
a = 5.4093 |
Specific resistivity, Ohm cm
undoped:
doped: |
1x108...1x1012
-- |
| Hall mobility, cm2/V/sec |
140(e) |
| EPD, cm-1 |
< 5x105 |
| Density of low angle boundaries, cm-1 |
-- |
| Twins and stacking faults |
< 4% of hexagonal phase |
| Orientation accuracy: |
max. 1°; typ. < 0.5° |
| Standard wafer sizes: |
5 mm x 5 mm, 10 mm x 10 mm
and round ø40 mm |
Max. sizes of wafers
(at thickness 1mm): |
10 mm x 10 mm, ø30 mm for (111)
10 mm x 10 mm for (100) and (110) |
| Standard thickness: |
0.5 mm or 1 mm |
Tolerances
Width/Length:
Diameter:
Thickness:
|
± 0.050 mm
+ 0.000 mm / -0.100 mm
± 0.050 mm
|
| Polishing: |
one side or both sides polished
Optical Polishing
Chemical mechanical polishing |
