| Structure formula: |
ZnTe |
| Crystal structure: |
cubic |
| Crystal axis: |
(111) |
| Orientation: |
(100); (110); (111) ±30 arc minutes.
Other orientations available on request. |
| Production method: |
Markov |
| Lattice paramters, A |
a = 6.1034 |
Specific resistivity, Ohm cm
undoped:
doped:
|
1x106
-- |
| Hall mobility, cm2/V/sec |
130(h) |
| EPD, cm-1 |
< 5x105 |
| Density of low angle boundaries, cm-1 |
< 10 |
| Twins and stacking faults |
twin free |
| Orientation accuracy: |
max. 1°; typ. < 0.5° |
| Standard wafer sizes: |
5 mm x 5 mm, 10 mm x 10 mm
and round ø 40 mm |
Max. sizes of wafers
(at thickness 1 mm): |
(111) ø 40 mm
(110) 35 x 15
(100) 35 x 15
|
| Standard thickness: |
0.5 mm or 1 mm |
Tolerances
Width/Length:
Diameter:
Thickness:
|
± 0.050 mm
+ 0.000 mm / -0.100 mm
± 0.050 mm
|
| Polishing: |
one side or both sides polished.
Optical Polishing
Chemical mechanical polishing
|
